SEMICONDUCTOR SUBSTRATES AND METHODS FOR PROCESSING SEMICONDUCTOR SUBSTRATES

摘要

Semiconductor substrates and methods for fabricating integrated circuits are provided. A method for fabricating an integrated circuit includes providing a semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region. The semiconductor substrate also has an upper surface. The method includes forming an amorphous material over the upper surface of the semiconductor substrate in the peripheral region. Also, the method includes irradiating the upper surface of the semiconductor substrate, wherein the amorphous material inhibits cracking at the outer edge of the semiconductor substrate.

主权项

1. A method for processing a semiconductor substrate, the method comprising:
providing the semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region, wherein the semiconductor substrate has an upper surface; forming an amorphous material directly on the upper surface of the semiconductor substrate in the peripheral region; irradiating the upper surface of the semiconductor substrate; and inhibiting cracking at the outer edge of the semiconductor substrate with the amorphous material.