摘要 |
Provided are a polymer used for a manufacturing process of a semiconductor and a display, a resist underlayer film composition containing the polymer for a manufacturing process of a semiconductor and a display, and a method for manufacturing semiconductor device using the composition, and more specifically, the polymer of the present disclosure simultaneously has optimized etching selectivity, planarization characteristic, and excellent thermal resistance, such that the resist underlayer film composition containing the polymer is usable as a hard mask for a multilayer semiconductor lithography process. |
主权项 |
1. A polymer for preparing a resist underlayer film comprising:
a repeating unit represented by Chemical Formula 1 below: in Chemical Formula 1, Ar is (C10-C100)arylene, wherein the arylene of Ar may further include carbonyl, amino, oxygen, sulfur, and may be further substituted with one or more substituents selected from the group consisting of (C1-C20)alkyl, (C3-C20)cycloalkyl, (C2-C20)alkenyl, (C3-C20)cycloalkenyl, (C2-C20)alkynyl, 4- to 10-membered heterocycloalkyl, (C6-C20)aryl, (C3-C20)heteroaryl, halogen, cyano, hydroxy, (C1-C20)alkoxy, (C3-C20)cycloalkoxy, (C6-C20)aryloxy, (C1-C20)alkylthio, (C3-C20)cycloalkylthio, (C6-C20)arylthio, (C1-C20)alkylcarbonyl, (C2-C20)alkenylcarbonyl, (C6-C20)arylcarbonyl, (C3-C20)cycloalkylcarbonyl, and (C3-C20)cycloalkenylcarbonyl; Ar1 and Ar2 are each independently (C6-C30)arylene; L is Ar3 and Ar4 are each independently (C6-C30)arylene; Ar5 is trivalent (C6-C30)arylene; Ar6 is (C6-C30)aryl; the arylene of Ar3, Ar4 and Ar5, and the aryl of Ar6 may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl, (C6-C20)aryl, (C1-C10)alkoxy, (C6-C20)aryloxy, (C1-C10)alkyl(C6-C20)aryl and (C6-C20)aryl(C1-C10)alkyl, R is hydrogen, (C1-C20)alkyl, (C3-C10)cycloalkyl or (C6-C20)aryl, and the alkyl, cycloalkyl, or aryl of R may be further substituted with one or more substituents selected from the group consisting of (C1-C10)alkyl, (C3-C10)cycloalkyl and (C6-C20)aryl; w is an integer of 1 to 5; u is an integer of 0 or 1; and the heteroaryl and the heterocycloalkyl include one or more heteroatoms selected from B, N, O, S, P(═O), Si, Se and P. |