SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM

摘要

One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment.

主权项

1. A semiconductor device comprising:
an oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween, wherein a spin density of the oxide semiconductor film is lower than 9.3×1016 spins/cm3, wherein a carrier density of the oxide semiconductor film is lower than 1×1015/cm3, wherein the spin density is calculated from a peak of a signal detected by electron spin resonance spectroscopy, and wherein the peak is due to oxygen vacancies in the oxide semiconductor film.