| 发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
| 摘要 |
Disclosed is a plasma processing apparatus for performing a processing on a processing target substrate by applying of plasma of a processing gas to the processing target substrate. The plasma processing apparatus includes: a processing container configured to removably accommodate the processing target substrate; a lower electrode provided in the processing container to place the processing target substrate thereon; an upper electrode provided in the processing container to face the lower electrode; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; and an electromagnet having one or more annular coils around a central axis that passes through a center of the lower electrode vertically in an upper portion or at an upper side of the processing container. |
| 申请公布号 |
US2017018407(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201515124589 |
申请日期 |
2015.02.26 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KONDO Takashi |
| 分类号 |
H01J37/32;H01L21/67;H01L21/311 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing apparatus for performing a processing on a processing target substrate by applying plasma of a processing gas to the processing target substrate, the apparatus comprising:
a processing container configured to removably accommodate the processing target substrate; a lower electrode provided in the processing container to place the processing target substrate thereon; an upper electrode provided in the processing container to face the lower electrode; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; and an electromagnet having one or a plurality of annular coils around a central axis that passes through a center of the lower electrode vertically, in an upper portion or at an upper side of the processing container. |
| 地址 |
Tokyo JP |
