发明名称 Semiconductor Device and Method of Manufacture
摘要 An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.
申请公布号 US2017018531(A1) 申请公布日期 2017.01.19
申请号 US201514799756 申请日期 2015.07.15
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Jing-Cheng;Yu Chen-Hua;Tsai Po-Hao
分类号 H01L25/065;H01L23/552;H01L25/00;H01L21/56;H01L21/3205;H01L23/50;H01L23/31 主分类号 H01L25/065
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor die encased in an encapsulant; first vias extending through the encapsulant and separated from the semiconductor die by the encapsulant; at least one reference via extending through the encapsulant, wherein the semiconductor die, the first vias, and the at least one reference via are part of a first integrated fan out package; and a second semiconductor device electrically connected to the first vias but not electrically connected to the at least one reference via.
地址 Hsin-Chu TW