发明名称 |
Semiconductor Device and Method of Manufacture |
摘要 |
An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes. |
申请公布号 |
US2017018531(A1) |
申请公布日期 |
2017.01.19 |
申请号 |
US201514799756 |
申请日期 |
2015.07.15 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Jing-Cheng;Yu Chen-Hua;Tsai Po-Hao |
分类号 |
H01L25/065;H01L23/552;H01L25/00;H01L21/56;H01L21/3205;H01L23/50;H01L23/31 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor device comprising:
a semiconductor die encased in an encapsulant; first vias extending through the encapsulant and separated from the semiconductor die by the encapsulant; at least one reference via extending through the encapsulant, wherein the semiconductor die, the first vias, and the at least one reference via are part of a first integrated fan out package; and a second semiconductor device electrically connected to the first vias but not electrically connected to the at least one reference via. |
地址 |
Hsin-Chu TW |