发明名称 STRUCTURE WITH CONDUCTIVE PLUG AND METOD OF FORMING THE SAME
摘要 Provided is a structure with a conductive plug including a substrate, a first dielectric layer, an etch stop layer, a second dielectric layer, a conductive plug and a liner. The substrate has a conductive region therein. The first dielectric layer, the etch stop layer and the second dielectric layer are sequentially formed on the substrate and have at least one opening therethrough. Besides, the opening has a substantially vertical sidewall. The conductive plug fills in the opening and is electrically connected to the conductive region. The liner surrounds the upper portion of the conductive plug. A method of forming a structure with a conductive plug is further provided.
申请公布号 US2017018500(A1) 申请公布日期 2017.01.19
申请号 US201514801648 申请日期 2015.07.16
申请人 MACRONIX International Co., Ltd. 发明人 Lee Ching-Hsiung;Tsai Shih-Chang
分类号 H01L23/528;H01L21/768;H01L23/532 主分类号 H01L23/528
代理机构 代理人
主权项 1. A structure with a conductive plug, comprising: a substrate, having a conductive region therein; a first dielectric layer, an etch stop layer and a second dielectric layer, sequentially disposed on the substrate, wherein a portion of the first dielectric layer and a portion of the etch stop layer are disposed on the conductive region, wherein at least one opening penetrates through the first dielectric layer, the etch stop layer and the second dielectric layer; a conductive plug, filling in the opening and electrically connected to the conductive region, wherein the conductive plug has a side surface and a bottom surface, and the bottom surface of the conductive plug is in direct contact with the conductive region; and a liner, disposed on the etch stop layer and surrounding a portion of the side surface of the conductive plug.
地址 Hsinchu TW