发明名称 |
TUNABLE REACTANCE DEVICES, AND METHODS OF MAKING AND USING THE SAME |
摘要 |
A tunable reactance device and methods of manufacturing and using the same are disclosed. The tunable reactance device includes a substrate, a microelectromechanical (MEM) structure supported on the substrate and comprising a conductive material, and a driver configured to move the MEM structure with respect to the substrate upon application of an electrostatic force to the driver. A gap between the MEM structure and the substrate is maintained when the driver moves the MEM structure. The tunable reactance device has (i) a first reactance and a first electromagnetic field topology when the electrostatic force is applied to the driver and (ii) a different reactance and a different electromagnetic field topology when a different electrostatic force is applied to the driver. |
申请公布号 |
US2017019086(A1) |
申请公布日期 |
2017.01.19 |
申请号 |
US201615204247 |
申请日期 |
2016.07.07 |
申请人 |
DUEWEKE Michael J. |
发明人 |
DUEWEKE Michael J. |
分类号 |
H03H9/24;H01G5/18;H01F21/02 |
主分类号 |
H03H9/24 |
代理机构 |
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代理人 |
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主权项 |
1. A tunable reactance device, comprising:
a) a substrate; b) a first microelectromechanical (MEM) structure supported on the substrate and comprising a conductive material, wherein a first gap is between the first MEM structure and the substrate; and c) one or more drivers configured to move the first MEM structure with respect to the substrate and maintain a second gap identical to or different from the first gap upon application of an electrostatic force to at least one of the one or more drivers, wherein:the tunable reactance device has (i) a first reactance and a first electromagnetic field topology when the electrostatic force is applied to the at least one of the one or more drivers and (ii) a second reactance different from the first reactance and a second electromagnetic field topology different from the first electromagnetic field topology when a different electrostatic force is applied to the one or more drivers. |
地址 |
Campbell CA US |