发明名称 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL WITH SELECTIVE DOPING
摘要 A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.
申请公布号 US2017018677(A1) 申请公布日期 2017.01.19
申请号 US201515124097 申请日期 2015.03.05
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 LE PERCHEC Jérôme;MONNA Rémi
分类号 H01L31/18;H01L31/0216;H01L31/0224 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for manufacturing a photovoltaic cell comprising: providing a semiconductor substrate doped of a first conductivity type; forming a first doped region in the substrate, the first region having a first concentration of doping elements; forming, by ion implantation of doping elements into the substrate, at least one set of alignment patterns, whose the largest dimension is less than a millimetre, and a second region neighbouring the first region, having a second concentration of doping elements greater than the first concentration; subjecting the substrate to a heat treatment, so as to activate the doping elements and to form an oxide layer at a surface of the substrate, above the alignment patterns, the first region and the second region, the second concentration and the heat treatment conditions being chosen such that the oxide layer has a thickness above the alignment patterns which is at least 10 nm greater than the thickness of the oxide layer above a substrate area adjacent to the alignment patterns; depositing an anti-reflection layer on the oxide layer; and depositing through a screen an electrode on the anti-reflection layer, facing the second region, the screen being positioned relative to the substrate using the alignment patterns.
地址 Paris FR
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