| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device is provided. A fin is disposed on a substrate. The fin, including a first material and a second material, includes a first fin area and a second fin area. A gate structure is disposed on the first fin area. A source region is in contact with the second fin area. The first fin area includes the first material at a first concentration, the second fin area includes the first material at a second concentration which is greater than the first concentration. |
| 申请公布号 |
US2017018644(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514800054 |
申请日期 |
2015.07.15 |
| 申请人 |
SUK SUNG-DAE;Seo Kang-Ill |
发明人 |
SUK SUNG-DAE;Seo Kang-Ill |
| 分类号 |
H01L29/78;H01L29/06;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a fin including a first material and a second material disposed on the substrate, wherein the fin includes a first fin area and a second fin area; a gate structure disposed on the first fin area; and a source region being in contact with the second fin area, wherein the first fin area includes the first material at a first concentration, the second fin area includes the first material at a second concentration which is greater than the first concentration. |
| 地址 |
Seoul KR |
