发明名称 No-flow underfill process and material therefor
摘要 A no-flow underfill material (20) and process suitable for underfilling a bumped circuit component (10). The underfill material (20) initially comprises a dielectric polymer material (22) in which is dispersed a precursor capable of reacting to form an inorganic filler (24). The underfill process generally entails dispensing the underfill material (20) over terminals (18) on a substrate (16), and then placing the component (10) on the substrate (16) so that the underfill material (20) is penetrated by the bumps (12) on the component (10) and the bumps (12) contact the terminals (18) on the substrate (16). The bumps (12) are then reflowed to form solid electrical interconnects (26) that are encapsulated by the resulting underfill layer (28). The precursor may be reacted to form the inorganic filler (24) either during or after reflow.
申请公布号 EP1460684(B1) 申请公布日期 2017.01.18
申请号 EP20040075615 申请日期 2004.02.26
申请人 Intel Corporation 发明人 Workman, Derek B.;Stepniak, Frank;Chaudhuri, Arun K.;Walsh, Matthew R.
分类号 H01L21/56;C08K5/54;C08L63/00;H01L21/58;H01L21/60;H01L23/00;H01L23/29 主分类号 H01L21/56
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