エッチング液、これを用いるエッチング方法および半導体基板製品の製造方法

摘要

PROBLEM TO BE SOLVED: To provide an etchant capable of selectively removing a layer containing a certain metal while suppressing damage of a silicide layer (in particular, a layer containing germanium silicide), and exhibiting excellent etching characteristics, an etching method using the same, and a method for manufacturing a semiconductor substrate product.SOLUTION: The etchant for a semiconductor process, contains fluorine ion and acid of pKa2 or smaller.