发明名称 |
METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER, AND SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL SIC WAFER |
摘要 |
Provided is a method for manufacturing an SiC single-crystal substrate making it possible to obtain an epitaxial SiC wafer provided with a high-quality SiC single-crystal thin film devoid of surface defects, etc. Also provided is said SiC single-crystal substrate. A method for manufacturing an SiC single-crystal substrate for an epitaxial SiC wafer having a high-quality SiC single-crystal thin film devoid of surface defects, etc., wherein the surface of the SiC single-crystal substrate is polished using chemical-mechanical polishing (CMP) at a speed of no more than 100 nm/h to remove the surface in a thickness of 100 nm or greater, and produce no more than 1 approximately circular pit per cm 2 , the pit having a diameter of 0.5-1.5 µm and a depth of 50-500 nm. |
申请公布号 |
EP3007209(A4) |
申请公布日期 |
2017.01.18 |
申请号 |
EP20140808288 |
申请日期 |
2014.05.26 |
申请人 |
Nippon Steel & Sumitomo Metal Corporation |
发明人 |
AIGO, Takashi;ITO, Wataru;FUJIMOTO, Tatsuo |
分类号 |
H01L21/306;C30B25/18;C30B25/20;C30B29/36;H01L21/205 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|