A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
申请公布号
EP3118681(A1)
申请公布日期
2017.01.18
申请号
EP20160179566
申请日期
2007.03.12
申请人
Shin-Etsu Chemical Co., Ltd.;Toppan Printing Co., Ltd.