Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features

摘要

Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic contact structure has a root-mean-squared (RMS) surface roughness of less than 10 nanometers, and more preferably less than or equal to 7.5 nanometers, and more preferably less than or equal to 5 nanometers, and more preferably less than or equal to 2 nanometers, and even more preferably less than or equal to 1.5 nanometers.

主权项

1. A semiconductor device comprising:
a Group III nitride semiconductor structure; an ohmic contact structure having a root-mean-squared (RMS) surface roughness in a range between about 1.3 nanometers (nm) and about 10 nm on a surface of the Group III nitride semiconductor structure; and an alternating series of one or more silicon layers and one or more nickel layers opposite the Group III nitride semiconductor structure.