发明名称 Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode
摘要 A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.
申请公布号 US9548422(B2) 申请公布日期 2017.01.17
申请号 US201414454612 申请日期 2014.08.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Kim Tae Hun;Kim Ki Seok;Lim Chan Mook;Kim Tae Kang
分类号 H01L33/40;H01L33/38;H01L33/14 主分类号 H01L33/40
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A semiconductor light emitting device, comprising: a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked therein; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the second electrode includes: a current blocking layer disposed in a region of an upper surface of the second conductivity type semiconductor layer;a reflective part disposed on the current blocking layer;a transparent electrode layer spaced apart from the reflective part, having an opening surrounding the reflective part, and disposed on the second conductivity type semiconductor layer;a pad electrode part spaced apart from the transparent electrode layer while covering the reflective part, and disposed within a region of the current blocking layer; andat least one finger electrode part extending from the pad electrode part in one direction and having at least one portion thereof disposed on the transparent electrode layer.
地址 Suwon-Si, Gyeonggi-Do KR