发明名称 |
Method for manufacturing a thin film transistor array panel |
摘要 |
A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor. |
申请公布号 |
US9548325(B2) |
申请公布日期 |
2017.01.17 |
申请号 |
US201614992625 |
申请日期 |
2016.01.11 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Chin Hong-Kee;Yeo Yun Jong;Kim Sang Gab;Bang Jung Suk;Cho Byeong Hoon |
分类号 |
H01L21/84;H01L21/00;H01L21/8234;H01L27/12;H01L21/306;H01L21/308;H01L21/3213;H01L27/144;H01L31/0376;H01L31/113;H01L31/20 |
主分类号 |
H01L21/84 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A method of manufacturing a thin film transistor array panel, comprising:
forming a first insulation layer on a substrate; forming a first semiconductor material layer on the first insulation layer; forming an etching passivation material layer on the first semiconductor material layer; forming a first photoresist layer on the etching passivation material layer; etching, using the first photoresist layer as a mask, the etching passivation material layer to form an etching passivation layer; etching, using the first photoresist layer as a mask, the first semiconductor material layer to form a first semiconductor pattern comprising a protrusion not covered by the etching passivation layer; forming, sequentially, a second insulation layer and a second semiconductor material layer on the etching passivation layer and the first semiconductor pattern; forming a second photoresist layer on the second semiconductor material layer; etching, using the second photoresist layer as a mask, the second semiconductor material layer to form a first semiconductor; etching the first insulation layer not covered by the second photoresist layer and the protrusion not covered by the etching passivation layer to form a second semiconductor comprising an undercut region under the etching passivation layer; and forming, in the first insulation layer, a stepped portion spaced apart from an edge of the second semiconductor. |
地址 |
Yongin-si KR |