Circuit and system of using FinFET for building programmable resistive devices

摘要

Junction diodes or MOS devices fabricated in standard FinFET technologies can be used as program selectors or One-Time Programmable (OTP) element in a programmable resistive device, such as interconnect fuse, contact/via fuse, anti-fuse, or emerging nonvolatile memory such as MRAM, PCRAM, CBRAM, or RRAM. The MOS or diode can be built on at least one fin structure or at least one active region that has at least one first active region and a second active region. The first and the second active regions can be isolated by a dummy MOS gate or silicide block layer (SBL)to construct a diode.

主权项

1. A programmable resistive memory, comprising:
a plurality of programmable resistive cells, at least one of the programmable resistive cells comprising:
a resistive element;at least one fin structure coupled to the resistive element, the at least one fin structure being a semiconductor structure and including at least a first active region and a second active region, the first active region having a first type of dopant, and the second active region having the first type of dopant or the second type of dopant; anda gate provided over at least a portion of the at least one fin structure, the gate being provided between the first and second active regions, wherein at least a portion of the first and second active regions residing in a common well or on an isolated substrate.