Optoelectronic devices with back contact

摘要

A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the optoelectronic device. A top contact is located within a region of the dielectric material and contacting a topmost surface of the optoelectronic device. A bottom metal contact is located beneath the optoelectronic device and lining a pair of openings located with other regions of the dielectric material, wherein a portion of the bottom metal contact contacts an entire bottommost surface of the optoelectronic device.

主权项

1. A semiconductor structure comprising:
an optoelectronic device located in one region of a substrate; a dielectric material located adjacent and atop said optoelectronic device; a top contact located within a region of said dielectric material and contacting a topmost surface of said optoelectronic device; a bottom metal contact located beneath said optoelectronic device and lining a pair of openings located within other regions of said dielectric material, wherein a portion of said bottom metal contact contacts an entire bottommost surface of said optoelectronic device, and wherein another portion of said bottom metal contact directly contacts a portion of a topmost surface of an insulator layer, said insulator layer is located on a topmost surface of said substrate in said one region; and germanium portions contacting other portions of said topmost surface of said insulating layer, wherein said germanium portions have a sidewall surface that contacts a portion of said bottom metal contact.