Transistor device with integrated gate-resistor

摘要

A transistor device includes an individual transistor cell arranged in a transistor cell field on a semiconductor body, the individual transistor cell having a gate electrode. The transistor device further includes a gate contact, electrically coupled to the gate electrode and configured to switch on the individual transistor cell by providing a gate current in a first direction and configured to switch off the individual transistor cell by providing a gate current in a second direction, the second direction being opposite to the first direction. The transistor device also includes a gate-resistor structure monolithically integrated in the transistor device. The gate-resistor structure provides a first resistance for the gate current when the gate current flows in the first direction, and provides a second resistance for the gate current, which is different from the first resistance, when the gate current flows in the second direction.

主权项

1. A gate-resistor structure on a semiconductor body, the gate-resistor structure comprising:
a connecting layer being disposed outside of the semiconductor body and comprising a connecting section, the connecting section being coupled to a plurality of transistor cells; a first resistance section of the connecting layer, the first resistance section of a first or a second conductivity type; a gate contact for receiving a gate signal for the transistor cells, the gate contact being coupled to the first resistance section; a second resistance section of the connecting layer, the second resistance section electrically coupled to the gate contact; an insulating layer insulating the first resistance section from the connecting section and the second resistance section; and a first diode region arranged in the first resistance section to form a diode, wherein the first resistance section including the diode is coupled between a portion of the first resistance section directly adjoining the first diode region and the gate contact.