Substrate processing apparatus, method of processing substrate, and method of manufacturing semiconductor device

摘要

The present invention shortens the time needed to decrease the oxygen concentration in a chamber to be filled with an inert gas to a desired concentration. A substrate processing apparatus includes: a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber. The carrying chamber includes: a plurality of wall bodies configured to form a housing of the carrying chamber; a joint at which the plurality of wall bodies are joined; an isolated space creating member configured to cover the joint and thereby create an isolated space separated from the carrying chamber; and an exhaust section configured to purge gas in the isolated space.

主权项

1. A substrate processing apparatus comprising:
a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber, the carrying chamber including:
a plurality of wall bodies configured to form a housing of the carrying chamber;a joint at which the plurality of wall bodies are joined; andan isolated space creating member comprising a hat-shaped cross section and configured to cover the joint and provide an isolated space between the plurality of wall bodies, the joint and the isolated space creating member and separated from an inner space of the carrying chamber; and an exhaust section configured to exhaust atmosphere in the isolated space formed by the plurality of wall bodies, the joint and the isolated space creating member.