Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof

摘要

An integrated circuit device includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, and a semiconductor fin protruding above the insulation regions. The insulation regions have a first portion and a second portion, with the first portion and the second portion on opposite sides of the semiconductor fin. The semiconductor fin has a first height. The integrated circuit device further includes a gate stack over a middle portion of the semiconductor fin, and a fin spacer on a sidewall of an end portion of the semiconductor fin. The fin spacer has a second height. The first height is greater than about two times the second height.

主权项

1. An integrated circuit device comprising:
a semiconductor substrate; insulation regions extending into the semiconductor substrate; a semiconductor fin protruding above the insulation regions, wherein the insulation regions comprise a first portion and a second portion, with the first portion and the second portion on opposite sides of the semiconductor fin, and wherein the semiconductor fin has a first height; a gate stack over a middle portion of the semiconductor fin; and a first fin spacer on a sidewall of an end portion of the semiconductor fin, wherein the first fin spacer has a second height, and wherein the first height is greater than about two times the second height.