Methods for forming vertical semiconductor pillars

摘要

A method for forming a semiconductor device includes providing a semiconductor structure, which includes a semiconductor substrate and a first mask layer on the substrate. The first mask layer is used to form a plurality of first trenches that extends into the substrate and extends laterally in a first direction and do not intersect each other. The first trenches are then filled with a fill material. Next, a second mask layer is formed on the semiconductor structure filled with the fill material. The second mask layer is then used to form a second plurality of trenches in the semiconductor substrate that extend laterally in a second direction and do not intersect each other. Each of the second trenches intersects at least one of the first plurality of trenches. Next, the fill material is removed to form a plurality of vertical pillars defined by intersecting first trenches and second trenches.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
providing a semiconductor structure, which includes a semiconductor substrate and a first mask layer on the substrate; using the first mask layer to form a plurality of first trenches in the semiconductor substrate that extend laterally in a first direction and do not intersect each other, the plurality of first trenches extending into the substrate; filling the plurality of first trenches with a fill material; forming a second mask layer on the semiconductor structure filled with the fill material; and using the second mask layer to form a plurality of second trenches in the semiconductor substrate that extend laterally in a second direction and do not intersect each other, each of the second trenches intersecting at least one of the plurality of first trenches; and removing the fill material to form a plurality of vertical pillars defined by intersecting first trenches and second trenches.