METHOD AND APPARATUS FOR LIGHT-IRRADIATION HEAT TREATMENT

摘要

Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash light is applied for flash heating from a flash lamp to an upper surface of the semiconductor wafer. High-temperature treatment gas heated by a heater is supplied into the chamber to preheat a structure inside the chamber including a susceptor before heat treatment for an initial semiconductor wafer of a lot starts. By raising the temperature of the structure inside the chamber to a temperature substantially equivalent to a temperature of the structure during steady treatment, all semiconductor wafers constituting the lot are supportable on the susceptor maintained at a constant temperature without the necessity of dummy running. Accordingly, a temperature history is equalized for all the semiconductor wafers.

主权项

1. A heat treatment method that heats a substrate by irradiating the substrate with light, comprising steps of:
(a) transporting the substrate into a chamber; (b) applying light to the substrate transported into said chamber; and (c) raising a temperature of a structure inside said chamber by supplying heated treatment gas into said chamber before an initial substrate of a lot is transported to said chamber.