HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL

摘要

A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

主权项

1. A solar cell, comprising:
a silicon substrate; a first emitter region disposed on a surface of the silicon substrate and comprising a layer of a wide band gap doped semiconductor of a first conductivity type; a second emitter region disposed on the surface of the silicon substrate and comprising a crystalline doped silicon layer of a second conductivity type disposed on a thin dielectric layer; and first and second contacts disposed on, and electrically connected to, the first and second emitter regions, respectively.