SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in contact with a lower end of the termination trench; a p-type outer circumference region being in contact with the termination trench from an outer circumferential side and exposed on a surface of the semiconductor device; a plurality of guard ring regions of a p-type provided on an outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region separating the p-type outer circumference region from the guard ring regions and separating the guard ring regions from each another.

主权项

1. A semiconductor device that comprises a semiconductor substrate, the semiconductor device comprising:
a first region of an n-type provided in the semiconductor substrate and exposed on a surface of the semiconductor substrate; a second region of a p-type provided below the first region; a third region of the n-type provided below the second region and separated from the first region by the second region; a plurality of gate trenches provided in the surface, penetrating the first region and the second region, and reaching the third region; first insulating layers provided in the gate trenches; gate electrodes provided in the gate trenches and facing the second region via the first insulating layers; fourth regions of the p-type being in contact with lower ends of the gate trenches; a termination trench provided in the surface and extending so as to surround a region in which the plurality of gate trenches is provided in a planar view of the surface; a second insulating layer provided in the termination trench; a p-type lower end region of the p-type being in contact with a lower end of the termination trench; a p-type outer circumference region of the p-type provided on an outer circumferential side of the termination trench, being in contact with the termination trench, and exposed on the surface; a plurality of guard ring regions of the p-type provided on the outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region of the n-type provided on the outer circumferential side of the termination trench, connected to the third region, separating the p-type outer circumference region from the guard ring regions, and separating the guard ring regions from each another, wherein a step portion is provided on the surface so that the surface comprises a first surface and a second surface projecting from the first surface, the termination trench is provided in the second surface, the p-type outer circumference region is exposed in a range extending across the second surface and the first surface, and the plurality of guard ring regions is exposed on the first surface.