INTEGRATED THERMOELECTRIC DEVICES IN FIN FET TECHNOLOGY

摘要

Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

主权项

1. A thermoelectric device, comprising:
a substrate; a first fin structure disposed on the substrate; a first connecting layer disposed on a first end of the first fin structure; a second connecting layer disposed on a second end of the first fin structure, the first fin structure being electrically coupled to the first connecting layer and the second connecting layer; a first thermal conductive structure thermally coupled to the first end of the first fin structure; and a second thermal conductive structure thermally coupled to the second end of the first fin structure, the first fin structure configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the first fin structure.