| 摘要 |
Provided is an organic thin-film transistor which is a bottom-gate type organic thin-film transistor including a substrate; a gate electrode provided on the substrate; a first gate insulating layer provided to cover the gate electrode; a second gate insulating layer provided on the first gate insulating layer; an organic semiconductor layer provided on the second gate insulating layer; and a source electrode and a drain electrode provided in contact with the organic semiconductor layer and connected to each other through the organic semiconductor layer, in which the surface of the first gate insulating layer on the second gate insulating layer side is subjected to an alignment treatment, and the second gate insulating layer is a layer formed by polymerizing and immobilizing a polymerizable crystalline compound aligned in accordance with the alignment treatment, in the aligned state. |
