| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows preventing element breakdown at a termination region.SOLUTION: A semiconductor device includes; a first electrode; a first-conductivity-type first semiconductor layer provided on the first electrode; a second-conductivity-type second semiconductor layer provided on the first semiconductor layer; a first-conductivity-type third semiconductor layer provided on the second semiconductor layer and having higher first-conductivity-type impurity concentration than the first semiconductor layer; gate electrodes provided in the third semiconductor layer via an insulating film along a first direction; a second electrode electrically connected to the second semiconductor layer and the third semiconductor layer; and contact regions electrically connecting the second electrode and the second semiconductor layer, provided spaced apart from each other in the first direction, and having nonconstant width. |
