| 摘要 |
PROBLEM TO BE SOLVED: To provide an accurate evaluation method of epitaxial growth at a semiconductor wafer end part (an edge part).SOLUTION: A method of evaluating an edge shape of a semiconductor wafer before and after epitaxial growth, includes following steps of: performing marking in the vicinity of an edge part to be measured on a surface of the semiconductor wafer before the epitaxial growth; measuring a shape of the edge part of the marked semiconductor wafer; performing the epitaxial growth on the marked semiconductor wafer; measuring a shape of the edge part after the epitaxial growth; and evaluating a change between the shape of the edge part before the epitaxial growth and the shape of the edge part after the epitaxial growth. |
