| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method capable of preventing wafer breakage when peeling a support member from a thinly ground wafer.SOLUTION: A wafer processing method comprises the steps of: forming a groove (D) deeper than a finishing thickness (t) of a wafer (W) by irradiating a surface (W1) side of the wafer (W) with a laser beam along a division schedule line; opposing a surface of the wafer to a metallic support member (S) applied with a resin (R), pressing the wafer, and sticking and fixing the wafer to the support member by curing the resin (wafer sticking step); thinning the wafer to the finishing thickness by grinding a rear surface (W2) of the wafer, exposing the groove to the rear surface side of the wafer, and dividing the wafer (rear surface grinding step); sticking an expand tape (T2) to the rear surface of the wafer; and softening the resin and peeling the support member and the resin from the wafer by curving the support member (peeling step). |
