| 发明名称 | Oxide sputtering target, and thin film transistor using the same | ||
| 摘要 | An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %. | ||
| 申请公布号 | US9543444(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201414487916 | 申请日期 | 2014.09.16 |
| 申请人 | SAMSUNG DISPLAY CO., LTD. | 发明人 | Kishimoto Katsushi;Tanaka Yoshinori;Moon Yeon Keon;Sohn Sang Woo;Shin Sang Won;Fukasawa Takayuki |
| 分类号 | H01L29/786;H01L29/26;H01J37/34 | 主分类号 | H01L29/786 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. An oxide sputtering target comprising: at least one of indium (In), zinc (Zn), tin (Sri), and gallium (Ga); and tungsten (W) in an amount from 0.005 mol % to 1 mol %, wherein each of the atoms in the oxide sputtering target is arranged with a hexagonal close packed structure. | ||
| 地址 | Yongin, Gyeonggi-Do KR | ||