发明名称 Ionizer and substrate transfer system having the same, and method of manufacturing a semiconductor device using the same
摘要 An ionizer includes a body extending in a first direction, a sheath gas nozzle installed in a lower portion of the body and having a spray hole and an electrode needle disposed within the spray hole to generate a corona discharge, a gas supply provided in the body and configured to be in fluid communication with the spray hole to supply a gas to the spray hole such that ions generated by the electrode needle are spayed out to the outside of the ionizer from the spray hole, and a pair of first and second guiding plates disposed at opposite sides of the sheath gas nozzle and extending downward from first and second sides of the body opposite to each other to guide the ions sprayed from the spray hole to be directed to a target. A semiconductor device may be manufactured using the ionizer.
申请公布号 US9543151(B2) 申请公布日期 2017.01.10
申请号 US201514730239 申请日期 2015.06.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Lee Jae-Wook;Jung Ho-Hyung
分类号 H01L21/469;H01L21/26;H01T19/04;H01T23/00;H01L21/68 主分类号 H01L21/469
代理机构 Muir Patent Law, PLLC 代理人 Muir Patent Law, PLLC
主权项 1. A method of manufacturing a semiconductor device, the method including: providing a substrate to a transfer chamber of a transfer apparatus; moving the substrate in the transfer chamber; while moving the substrate in the transfer chamber, spraying ionized gas toward the substrate using an ionizer, the ionizer including: a body having a gas supply chamber for supplying gas,an ion spraying cap installed in a lower portion of the body and having a spray hole in fluid communication with the gas supply to spray a gas supplied from the gas supply to the outside of the ionizer and an electrode needle disposed within the spray hole to generate a corona discharge and generate ionized gas, anda pair of first and second guiding plate portions disposed on opposite sides of the ion spraying cap and extending downward from the lower portion of the body respectively to guide the ionized gas sprayed from the spray hole to be directed toward the substrate; transferring the substrate to a process chamber; performing a fabrication process on the substrate while it is in the process chamber; and forming a semiconductor device from the processed substrate.
地址 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR