发明名称 |
Block copolymers and lithographic patterning using same |
摘要 |
Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copolymers can be used in lithography, filtration, and templating applications. |
申请公布号 |
US9541830(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201214342657 |
申请日期 |
2012.09.06 |
申请人 |
Cornell University |
发明人 |
Ober Christopher K.;Maeda Rina;You Nam-ho;Hayakawa Teruaki |
分类号 |
G03F7/004;G03F7/039;C08F214/18;C08F297/02;G03F7/038;G03F7/16;G03F7/32;C08F20/22;G03F7/20;G03F7/00 |
主分类号 |
G03F7/004 |
代理机构 |
Hodgson Russ LLP |
代理人 |
Hodgson Russ LLP |
主权项 |
1. A method of forming a patterned organic thin film comprising the steps of:
a) providing a substrate; b) forming a thin film of a block copolymer comprising a positive-tone polymer block and a negative-tone polymer block on the substrate, wherein the thin film has periodic microdomains; c) aligning the periodic microdomains of the thin film; d) exposing at least a portion of the thin film from b) to deep-UV or e-beam radiation to differentially affect the positive-tone polymer blocks and negative-tone polymer blocks in the exposed portion of the thin film such that an exposed pattern, and, optionally, an unexposed portion, of thin film is/are formed; and e) exposing the thin film from d) to a solvent such that the unexposed portion of block copolymer thin film, if present, and selected regions of the exposed portion of the thin film are removed, and a patterned organic thin film of the negative-tone polymer blocks or a patterned organic thin film of the positive-tone polymer blocks is formed. |
地址 |
Ithaca NY US |