发明名称 Block copolymers and lithographic patterning using same
摘要 Block copolymers and methods of making patterns of organic thin films using the block copolymers. The block copolymers comprise a fluorinated block. Thin films of the block copolymers have microdomains that can be aligned. As a result the patterns of organic thin films having smaller dimensions than the pattern of incident deep-UV or e-beam radiation can be formed. For example, the block copolymers can be used in lithography, filtration, and templating applications.
申请公布号 US9541830(B2) 申请公布日期 2017.01.10
申请号 US201214342657 申请日期 2012.09.06
申请人 Cornell University 发明人 Ober Christopher K.;Maeda Rina;You Nam-ho;Hayakawa Teruaki
分类号 G03F7/004;G03F7/039;C08F214/18;C08F297/02;G03F7/038;G03F7/16;G03F7/32;C08F20/22;G03F7/20;G03F7/00 主分类号 G03F7/004
代理机构 Hodgson Russ LLP 代理人 Hodgson Russ LLP
主权项 1. A method of forming a patterned organic thin film comprising the steps of: a) providing a substrate; b) forming a thin film of a block copolymer comprising a positive-tone polymer block and a negative-tone polymer block on the substrate, wherein the thin film has periodic microdomains; c) aligning the periodic microdomains of the thin film; d) exposing at least a portion of the thin film from b) to deep-UV or e-beam radiation to differentially affect the positive-tone polymer blocks and negative-tone polymer blocks in the exposed portion of the thin film such that an exposed pattern, and, optionally, an unexposed portion, of thin film is/are formed; and e) exposing the thin film from d) to a solvent such that the unexposed portion of block copolymer thin film, if present, and selected regions of the exposed portion of the thin film are removed, and a patterned organic thin film of the negative-tone polymer blocks or a patterned organic thin film of the positive-tone polymer blocks is formed.
地址 Ithaca NY US