| 发明名称 | Variable resistance material layers and variable resistance memory devices including the same | ||
| 摘要 | A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of Xp(GeaSb(1-a-b)Teb)(1-p), wherein an atomic concentration of the impurities X is in a range of 0<p≦0.2, an atomic concentration of Ge is in a range of 0.05≦a<0.19, and an atomic concentration of Te is in a range of 0.42≦b≦0.56. | ||
| 申请公布号 | US9543513(B2) | 申请公布日期 | 2017.01.10 |
| 申请号 | US201514965616 | 申请日期 | 2015.12.10 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Do-Hyung;Kim Jong-Uk;Ahn Dong-Ho;Cho Sung-Lae |
| 分类号 | H01L45/00;H01L27/24 | 主分类号 | H01L45/00 |
| 代理机构 | Myers Bigel, P.A. | 代理人 | Myers Bigel, P.A. |
| 主权项 | 1. A variable resistance material layer, comprising germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities (X), wherein the variable resistance material layer has a composition represented by a chemical formula of Xp(GeaSb(1-a-b)Teb)(1-p), and wherein an atomic concentration of X is in a range of 0<p≦0.2, an atomic concentration of Ge is in a range of 0.05≦a<0.19, and an atomic concentration of Te is in a range of 0.42≦b≦0.56, wherein the variable resistance material layer has a shape of a pillar, wherein a sum of top and bottom surface areas of the pillar is defined as M and an area of a sidewall of the pillar is defined as D, and wherein D is equal to or more than three times that of M. | ||
| 地址 | KR | ||