发明名称 |
Negative electrode active material for non-aqueous electrolyte secondary battery and method for manufacturing the same |
摘要 |
A method for manufacturing a negative electrode active material for a secondary battery that uses a non-aqueous electrolyte, including the steps of: depositing silicon according to an electron beam vapor-deposition method with metallic silicon as a raw material on a substrate of which temperature is controlled from 800 to 1100° C. at a vapor deposition rate exceeding 1 kg/hr in the range of film thickness of 2 to 30 mm; and pulverizing and classifying the deposited silicon to obtain the negative electrode active material. As a result, there is provided a method for manufacturing a negative electrode active material of silicon particles as an active material useful for a negative electrode of a non-aqueous electrolyte secondary battery that is, while maintaining high initial efficiency and battery capacity of silicon, excellent in the cycle characteristics and has a reduced volume change during charge/discharge. |
申请公布号 |
US9543578(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201213662061 |
申请日期 |
2012.10.26 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Nakanishi Tetsuo;Yamada Yoshiyasu;Taniguchi Kazuyuki |
分类号 |
H01M4/04;H01M4/38;B82Y30/00;C01B33/021;H01M4/134;H01M4/62;H01M10/0525 |
主分类号 |
H01M4/04 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A method for manufacturing a negative electrode active material for a secondary battery that uses a non-aqueous electrolyte, comprising the steps of:
depositing silicon according to an electron beam vapor-deposition method with metallic silicon as a raw material on a substrate, a temperature of the substrate being controlled from 800 to 1100° C., wherein the depositing is performed at a vapor deposition rate exceeding 1 kg/hr, and is performed so that the film thickness of the deposited silicon is in the range of 2 to 30 mm; and pulverizing and classifying the deposited silicon to obtain the negative electrode active material. |
地址 |
Tokyo JP |