发明名称 |
MULTIPLE LEVEL PROGRAM VERIFY IN A MEMORY DEVICE |
摘要 |
<p>Methods for multiple level program verify, memory devices, and memory systems are disclosed. In one such method, a series of programming pulses are applied to a memory cell to be programmed. A program verify pulse, at an initial program verify voltage, is applied to the memory cell after each programming pulse. The initial program verify voltage is a verify voltage that has been increased by a quick charge loss voltage. The quick charge loss voltage is subtracted from the initial program verify voltage after either a programming pulse has reached a certain reference voltage or a quantity of programming pulses has reached a pulse count threshold.</p> |
申请公布号 |
WO2010129181(A1) |
申请公布日期 |
2010.11.11 |
申请号 |
WO2010US31999 |
申请日期 |
2010.04.22 |
申请人 |
MICRON TECHNOLOGY, INC.;KIM, TAEHOON;HE, DEPING;KESSENICH, JEFFERY ALAN |
发明人 |
KIM, TAEHOON;HE, DEPING;KESSENICH, JEFFERY ALAN |
分类号 |
G11C16/34;G11C16/10;G11C16/12;G11C16/30 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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