Semiconductor sensor device and method of producing a semiconductor sensor device

摘要

The semiconductor device comprises a substrate (1) of semiconductor material with a front side (4) and an opposite rear side (7), a wiring layer (5) at the front side (4), a further wiring layer (8) at the rear side (7), and a through-substrate via (3) connecting the wiring layer (5) and the further wiring layer (8). A hot plate (24) is arranged on or in the substrate, and a sensor layer (21) is arranged in the vicinity of the hot plate. A mold compound (14) is arranged on the rear side (7) above the substrate (1), a cavity (17) is formed in the mold compound (14) to accommodate the sensor layer (21), and the cavity (17) is covered with a membrane (15).

主权项

1. A semiconductor sensor device, comprising:
a substrate of semiconductor material with a front side and an opposite rear side; a wiring layer at the front side; a further wiring layer at the rear side; a through-substrate via connecting the wiring layer and the further wiring layer; a sensor layer arranged at the rear side and electrically connected with the further wiring layer; a mold compound arranged on the rear side, the mold compound being covered with a membrane, the mold compound and the membrane forming a cavity accommodating the sensor layer; and a hot plate being arranged on or in the substrate in the vicinity of the sensor layer, wherein the sensor layer is arranged above the substrate and the hot plate is arranged between the substrate and the sensor layer, wherein the membrane is impermeable to liquids and permeable to a gas, wherein the sensor layer is provided for a gas sensor, wherein a recess is formed in the substrate below the sensor layer, and the hot plate is arranged above the recess of the substrate, and wherein the hot plate is part of the further wiring layer, which is a structured metal layer arranged in an oxide or nitride of the semiconductor material.