3D semiconductor integrated circuit device and method of manufacturing the same

摘要

A 3D semiconductor integrated circuit device and a method of manufacturing the same are provided. An active pillar is formed on a semiconductor substrate, and an interlayer insulating layer is formed so that the active pillar is buried in the interlayer insulating layer. The interlayer insulating layer is etched to form a hole so that the active pillar and a peripheral region of the active pillar are exposed. An etching process is performed on the peripheral region of the active pillar exposed through the hole by a certain depth, and a space having the depth is provided between the active pillar and the interlayer insulating layer. A silicon material layer is formed to be buried in the space having the depth, and an ohmic contact layer is formed on the silicon material layer and the active pillar.

主权项

1. A method of manufacturing a semiconductor integrated circuit device, the method comprising:
forming an active pillar in a semiconductor substrate; forming a gate electrode to surround sidewall of the active pillar; forming an interlayer insulating layer over the semiconductor substrate and the active pillar; forming a hole by etching the interlayer insulating layer so that an upper surface of the active pillar is exposed by the hole; forming a space extending from the hole down to between an upper sidewall of the active pillar and the interlayer insulating layer so that the upper sidewall of the active pillar is exposed and an upper surface of the gate electrode is not exposed; forming a silicon material layer in the space; and forming an ohmic contact layer on the silicon material layer and on the active pillar in the hole.