Semiconductor switching device including charge storage structure

摘要

A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. A second load terminal is electrically connected to a drain construction that forms second pn junctions with the body zones. Control structures, which include a control electrode and charge storage structures, directly adjoin the body zones. The control electrode controls a load current through the body zones. The charge storage structures insulate the control electrode from the body zones and contain a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load electrode.

主权项

1. A semiconductor device, comprising:
a first load terminal electrically connected to source zones of transistor cells, wherein the source zones form first pn junctions with body zones; a second load terminal electrically connected to a drain construction forming second pn junctions with the body zones; and control structures directly adjoining the body zones, the control structures comprising a control electrode and charge storage structures, the control electrode configured to control a load current through the body zones, the charge storage structures insulating the control electrode from the body zones and containing a control charge adapted to induce inversion channels in the body zones in the absence of a potential difference between the control electrode and the first load terminal, wherein the body zones are formed in semiconductor mesas formed from portions of a semiconductor body and separated from each other by the control structures.