发明名称 Sputtering target for forming protective film and laminated wiring film
摘要 A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.
申请公布号 US9543128(B2) 申请公布日期 2017.01.10
申请号 US201314090203 申请日期 2013.11.26
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 Mori Satoru;Nonaka Souhei
分类号 B32B15/20;H01J37/34;H05K3/02;H05K1/09;H05K3/06 主分类号 B32B15/20
代理机构 Locke Lord LLP 代理人 Locke Lord LLP
主权项 1. A backing plate-attached target for forming protective film on one surface or both surfaces of a Cu wiring film, the backing plate-attached target comprising a backing plate and a sputtering target that is soldered by using indium on the backing plate, the sputtering target consisting of: 8.0% by mass to 11.0% by mass of Al; 3.0% by mass to 5.0% by mass of Fe; 0.5% by mass to 2.0% by mass of Ni; and 0.5% by mass to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities.
地址 Tokyo JP