发明名称 |
Sputtering target for forming protective film and laminated wiring film |
摘要 |
A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target. |
申请公布号 |
US9543128(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201314090203 |
申请日期 |
2013.11.26 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Mori Satoru;Nonaka Souhei |
分类号 |
B32B15/20;H01J37/34;H05K3/02;H05K1/09;H05K3/06 |
主分类号 |
B32B15/20 |
代理机构 |
Locke Lord LLP |
代理人 |
Locke Lord LLP |
主权项 |
1. A backing plate-attached target for forming protective film on one surface or both surfaces of a Cu wiring film,
the backing plate-attached target comprising a backing plate and a sputtering target that is soldered by using indium on the backing plate, the sputtering target consisting of: 8.0% by mass to 11.0% by mass of Al; 3.0% by mass to 5.0% by mass of Fe; 0.5% by mass to 2.0% by mass of Ni; and 0.5% by mass to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. |
地址 |
Tokyo JP |