发明名称 |
Forming crown active regions for FinFETs |
摘要 |
A method includes forming a first mask over a substrate through a double patterning process, wherein the first mask comprises a horizontal portion and a plurality of vertical portions protruding over the horizontal portion, and wherein the vertical portions are spaced apart from each other, applying a first etching process to the first mask until a top surface of a portion of the substrate is exposed, applying a second etching process to the substrate to form intra-device openings and inter-device openings, wherein the inter-device openings are formed at the exposed portion of the substrate, filling the inter-device openings and the intra-device openings to form inter-device insulation regions and intra-device insulation regions and etching back the inter-device insulation regions and the intra-device insulation regions to form a plurality of fins protruding over top surfaces of the inter-device insulation regions and the intra-device insulation regions. |
申请公布号 |
US9543210(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201514846754 |
申请日期 |
2015.09.05 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Chen-Ping;Lin Hui-Min;Huang Ming-Jie;Lee Tung Ying |
分类号 |
H01L29/00;H01L21/8234;H01L29/66;H01L29/78 |
主分类号 |
H01L29/00 |
代理机构 |
Slater Matsil, LLP |
代理人 |
Slater Matsil, LLP |
主权项 |
1. A method comprising:
receiving a semiconductor substrate; etching the semiconductor substrate to simultaneously form a plurality of intra-device openings and a first and a second inter-device opening in the semiconductor substrate, wherein a first depth of the plurality of intra-device openings is less than a second depth of the first and the second inter-device openings; filling the plurality of intra-device openings to form a plurality of intra-device insulation regions, and filling the first and the second inter-device openings to form a first and a second inter-device insulation region, respectively, wherein the step of filling the plurality of intra-device openings and the step of filling the first and the second inter-device openings are performed simultaneously, and wherein the plurality of intra-device insulation regions are between the first and the second inter-device insulation regions; etching back the plurality of intra-device insulation regions and the first and the second inter-device insulation regions, wherein remaining portions of the semiconductor substrate above top surfaces of the plurality of intra-device insulation regions form a plurality of semiconductor fins; forming a gate dielectric on top surfaces and sidewalls of the plurality of semiconductor fins; and forming a gate electrode on the gate dielectric. |
地址 |
Hsin-Chu TW |