发明名称 |
Switching device having a non-linear element |
摘要 |
A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold. |
申请公布号 |
US9543359(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201414573770 |
申请日期 |
2014.12.17 |
申请人 |
Crossbar, Inc. |
发明人 |
Lu Wei;Jo Sung Hyun |
分类号 |
H01L27/24;H01L45/00;G11C11/00;H01L27/10 |
主分类号 |
H01L27/24 |
代理机构 |
Amin, Turocy & Watson, LLP |
代理人 |
Amin, Turocy & Watson, LLP |
主权项 |
1. A method for a semiconductor device having a plurality of memory devices formed between intersections of a first plurality of electrodes and a second plurality of electrodes, the method comprising:
applying a read threshold voltage across a first electrode from the first plurality of electrodes and a second electrode from the second plurality of electrodes, to thereby change a resistance state of a non-linear element in a first memory device that is coupled to the first electrode and the second electrode, from a high resistance state to a low resistance state, wherein the read threshold voltage is greater than a threshold voltage associated with the non-linear element, and wherein the read threshold voltage is less than a program threshold voltage associated with a first memory cell in the first memory device; applying a read voltage across the first electrode and the second electrode to thereby promote a first current flow through the first memory device, wherein the read voltage:
is applied while the resistance state of the non-linear element is the low resistance state,is greater than a hold voltage associated with the non-linear element, andis less than the read threshold voltage; and determining a resistance state associated with the first memory cell of the first memory device in response to the first current flow. |
地址 |
Santa Clara CA US |