Diode-based devices and methods for making the same

摘要

In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.

主权项

1. A method comprising:
forming a dielectric layer on a first substrate, the first substrate comprising a first crystalline semiconductor material, a first opening and a second opening each being through the dielectric layer and exposing the first crystalline semiconductor material; forming a first bottom diode region by growing a first portion of a second crystalline semiconductor material in and extending out of the first opening; forming a second bottom diode region by growing a second portion of a second crystalline semiconductor material in and extending out of the second opening; forming a first active diode region on the first bottom diode region, and a second active diode region on the second bottom diode region, the first active diode region being physically separated from the second active diode region; forming a continuous top diode region on the first active diode region and the second active diode region; bonding a second substrate to the continuous top diode region; removing the first substrate; forming a first contact on the second substrate; and forming a second contact on the dielectric layer and the second crystalline semiconductor material.