发明名称 Segmented power transistor
摘要 A power transistor includes multiple substantially parallel transistor fingers, where each finger includes a conductive source stripe and a conductive drain stripe. The power transistor also includes multiple substantially parallel conductive connection lines, where each conductive connection line connects at least one source stripe to a common source connection or at least one drain stripe to a common drain connection. The conductive connection lines are disposed substantially perpendicular to the transistor fingers. At least one of the source or drain stripes is segmented into multiple portions, where adjacent portions are separated by a cut location having a higher electrical resistance than remaining portions of the at least one segmented source or drain stripe.
申请公布号 US9543430(B2) 申请公布日期 2017.01.10
申请号 US201414531797 申请日期 2014.11.03
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 Edwards Henry Litzmann
分类号 H01L29/15;H01L29/78;H01L27/088;H01L29/06;H01L29/417;H01L23/482;H01L23/528 主分类号 H01L29/15
代理机构 代理人 Chan Tuenlap D.;Cimino Frank D.
主权项 1. A power transistor comprising: multiple substantially parallel transistor fingers, each finger including a conductive source stripe and a conductive drain stripe along a first direction; and multiple substantially parallel conductive connection lines, each connection line connecting at least one source stripe to a common source connection or at least one drain stripe to a common drain connection, the conductive connection lines disposed along a second direction substantially perpendicular to the transistor fingers; wherein at least one of the source or drain stripes is segmented into multiple portions, wherein adjacent portions are separated by a cut location having a higher electrical resistance than remaining portions of the at least one segmented source or drain stripe, and wherein a current path between the adjacent multiple portions is discouraged along the first direction.
地址 Dallas TX US
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