Field effect transistor with integrated Zener diode

摘要

One or more Zener diodes and a field effect transistor having a drain connected in series with the one or more Zener diodes are integrally formed by a plurality of doped regions in the same P-type semiconductor substrate and separated by a punch through stop region. An N-type region is formed under the one or more Zener diodes.

主权项

1. A device, comprising:
one or more Zener diodes; and a field effect transistor having a drain connected in series with the one or more Zener diodes; wherein the one or more Zener diodes and field effect transistor are formed by a plurality of doped regions on a common P-type semiconductor substrate and separated by a punch through stop region; and an N-type region formed under the one or more Zener diodes configured to stop punch through from a P-well or P-body region of the Zener diode to the common P-type semiconductor substrate, wherein the one or more Zener diodes include an N-type region formed in the common P-type substrate and a P-type region formed in a layer of the P-type substrate adjacent the N-type region.