发明名称 |
Silicon-based repair methods and composition |
摘要 |
There is set forth herein a silicon-based patch formulation comprising about 25 to 66 percent by volume of a solvent; about 4 to 10 percent by volume of a silicon-comprising binding material; and about 30 to 65 percent by volume of a patching material, the patching material comprising particles having one or more non-actinide Group IIIA elements, wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the patch formulation is about 0.95 to 1.25. |
申请公布号 |
US9540497(B2) |
申请公布日期 |
2017.01.10 |
申请号 |
US201514589021 |
申请日期 |
2015.01.05 |
申请人 |
General Electric Company |
发明人 |
Lipkin Don Mark;Antolino Nicholas Edward;Poerschke David;McEvoy Kevin Paul |
分类号 |
C08K3/34;B29C73/02;C09D183/04;C08K3/36;C08K3/22 |
主分类号 |
C08K3/34 |
代理机构 |
|
代理人 |
Darling John P. |
主权项 |
1. A silicon-based patch formulation comprising:
about 25 to 66 percent by volume of a solvent; about 4 to 10 percent by volume of a silicon-comprising binding material; andabout 30 to 65 percent by volume of a patching material, the patching material comprising particles having one or more non-actinide Group IIIA elements, wherein a molar ratio of the one or more non-actinide Group IIIA elements to silicon within the silicon-based patch formulation is about 0.95 to 1.25, wherein the particles having one or more non-actinide Group IIIA elements have at least a bimodal particle size distribution, wherein a particle size of a peak of a first distribution is greater than a particle size of a peak of a second distribution. |
地址 |
Niskayuna NY US |