FIBER LASER-BASED SYSTEM FOR UNIFORM CRYSTALLIZATION OF AMORPHOUS SILICON SUBSTRATE

摘要

A system for crystallizing amorphous Si (a-Si) panels by partial melt laser annealing (LA) or sequential lateral sol idi ficat ions (SLS) annealing process is provided. The system comprises at least one single transverse mode (SM) quasi -cont inuous wave (QCW) fiber laser source, emitting a pulsed harmonic beam; a beam conditioning assembly located downstream from the fiber laser source and configured to transform the harmonic beam such that the harmonic beam has desired divergence and spatial distribution characteristics; a beam velocity and profile assembly operative to provide the conditioned harmonic beam with a desired intensity profile at a desired scanning velocity in an object plane; a beam imaging assembly for imaging the conditioned harmonic beam in the object plane onto an image plane in at least one beam axis at a desired demagni ficat ion such that a width of the conditioned harmonic beam is reduced to a narrow linewidth; and a panel handling assembly operative to provide relative position and velocity between the imaged narrow linewidth beam and the panel such as to irradiate each location of the a-Si panel at least two times with an exposure time.