发明名称 Improved front contact heterojunction process
摘要 Methods of fabricating solar cells using improved front contact heterojunction processes, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having first and second light-receiving surfaces. A tunnel dielectric layer is disposed on the first and second light-receiving surfaces. An N-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the first light-receiving surface. A P-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the second light-receiving surface. A transparent conductive oxide layer is disposed on the N-type polycrystalline silicon layer and on the P-type polycrystalline silicon layer. A first set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the N-type polycrystalline silicon layer. A second set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the P-type polycrystalline silicon layer.
申请公布号 AU2015312128(A1) 申请公布日期 2017.01.05
申请号 AU20150312128 申请日期 2015.08.31
申请人 SunPower Corporation 发明人 Smith, David D.
分类号 H01L31/0236;H01L31/0392;H01L31/04;H01L31/072;H01L31/18 主分类号 H01L31/0236
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