| 发明名称 |
Semiconductor Devices and Method for Forming Semiconductor Devices |
| 摘要 |
A semiconductor device includes a semiconductor laminar structure arranged on a semiconductor substrate. The semiconductor laminar structure includes a first doping region of a field effect transistor structure and at least a part of a body region of the field effect transistor structure. The body region has a first conductivity type and the first doping region has a second conductivity type. The semiconductor device further includes an electrically conductive contact structure providing an electrical contact to the first doping region of the field effect transistor structure and to the body region of the field effect transistor structure at one or more sidewalls of the semiconductor laminar structure. |
| 申请公布号 |
US2017005091(A1) |
申请公布日期 |
2017.01.05 |
| 申请号 |
US201615196999 |
申请日期 |
2016.06.29 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Joshi Ravi Keshav;Baumgartl Johannes;Gruber Christoph;Haghofer Andreas;Poelzl Martin;Steinbrenner Juergen |
| 分类号 |
H01L27/088;H01L29/66;H01L29/417;H01L29/08;H01L29/10;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor laminar structure arranged on a semiconductor substrate, the semiconductor laminar structure comprising a first doping region of a field effect transistor structure and at least a part of a body region of the field effect transistor structure, wherein the body region comprises a first conductivity type and wherein the first doping region comprises a second conductivity type; and an electrically conductive contact structure providing an electrical contact to the first doping region of the field effect transistor structure and to the body region of the field effect transistor structure at one or more sidewalls of the semiconductor laminar structure. |
| 地址 |
Villach AT |
