| 摘要 |
The invention relates to a method for producing a transistor (100, 200, 300, 400, 500, 600, 700) having high electron mobility, comprising a substrate (101, 201, 301, 401, 501, 601, 701) having a heterostructure (103, 203, 303, 403, 503, 603, 703), in particular an AlGaN/GaN heterostructure, comprising the steps: producing (8030) a gate electrode by structuring a semiconductor layer, which is applied to the heterostructure (103, 203, 303, 403, 503, 603, 703), wherein the semiconductor layer (104, 204, 304, 404, 504, 604, 704) in particular comprises polysilicon, applying (8040) a passivation layer (105, 205, 305, 405, 505, 605) to the semiconductor layer (104, 204, 304, 404, 504, 604, 704), forming (8070) drain regions and source regions, in that first vertical openings are produced, which reach at least into the heterostructure (103, 203, 303, 403, 503, 603, 703), producing (8080) ohmic contacts in the drain regions and in the source regions by partial filling of the first vertical openings with a first metal at least to the height of the passivation layer (105, 205, 305, 405, 505, 605), and applying (8090) a second metal layer to the ohmic contacts, wherein the second metal layer protrudes beyond the passivation layer (105, 205, 305, 405, 505, 605). |
